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  • 產(chǎn)品名稱：Ossila材料Spiro-TTB

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  • 產(chǎn)品廠商：Ossila
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簡(jiǎn)單介紹：
Spiro-TTB, HTL material in OLED, OPV and perovskite solar cells
詳情介紹：

Spiro-TTB has a spirofluorene core with four attached ditolylamine at the 2 and 7 positions of spirofluorene. Like Spiro-OMeTAD, it is electron-rich and commonly used as a hole-transport layer material in OLED, OPV, and perovskite solar cells.

Compared to Spiro-OMeTAD, Spiro-TTB is less electron-rich, with four methoxyl groups being replaced by four methyl groups. It has a deeper HOMO energy level, which gives greater VOC, thus, better device performance can be expected.

General Information

CAS number 515834-67-0
Full name 2,2',7,7'-Tetra(N,N-di-p-tolyl)amino-9,9-spirobifluorene
Chemical formula C81H68N4
Molecular weight 1097.43 g/mol
Absorption λmax 384 nm in DCM
Fluorescence λmax 413 nm in DCM
HOMO/LUMO HOMO = 5.25 eV [1]
Classification / Family Spirofluorene derivative, Hole transport layer materials, Perovskite solar cells, Organic electronics.

Product Details

Purity Unsublimed > 98% (1H NMR)
Melting point Tg = 146 °C
Appearance Light yellow powder/crystals

Chemical Structure

Chemical structure of Spiro-TTB
Chemical structure of Spiro-TTB

Device Structure(s)

Device structure ITO (90 nm)/Spiro-TTB:F6-TCNNQ (4 wt.%, 10 nm)/NPB (20 nm)/NPB:Ir(MDQ)2acac (10 wt.%, 10 nm)/BAlq (65 nm)/BPhen:Cs (100 nm) [2]
Colour red light emitting device Red
Max. Power Efficiency 33.3 lm?W?1
Max. Current Efficiency 27.7 cd/A
Max. EQE 19.5%
Device structure ITO (90 nm)/Spiro-TTB:F6-TCNNQ (4 wt.%, 10 nm)/NPB (20 nm)/TCTA:Ir(ppy)2acac (8 nm)/TPBi:Ir(ppy)2acac (12 nm)/BAlq (50 nm)/BPhen:Cs (100 nm) [2]
Colour green light emitting device Green
Max. Power Efficiency 77.0 lm?W?1
Max. Current Efficiency 54.4 cd/A
Max. EQE 19.7%
Device structure ITO/NPB (75 nm)MoO3 (2 nm)/Au (2 nm)/Ag (6 nm)/Spiro-TTB:F6-TCNNQ (2 wt.%, 10 nm)/NPB (10 nm)/NPB:Ir(MDQ)2acac (10 wt.%, 20 nm)/BAlq (10 nm)/BPhen:Cs (85 nm)/Ag (100 nm) [3]
Colour red light emitting device Red
Max. EQE 39.6%


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