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  • 產(chǎn)品名稱：EMS硅片71893-07

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Silicon Wafers Type P

These silicon wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.

Specifications

1" 2" 3" 4" 6"
Material: Silicon Silicon Silicon Silicon Silicon
Diameter: 25 mm 50 mm 76 mm 100 mm 150 mm
Orientation: <100> <100> <111> <100> <100>
Resistance: 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms
Type P: Boron - 1 primary flat Boron - 1 primary flat Boron - 1 primary flat Boron - 1 primary flat Boron - 1 primary flat
SiO2 top coating: None None None None None
Wafer Thickness: 10-12 mill
(254-304μm) 		9-13 mill
(230-330μm) 		13.6-18.5 mill
(345-470μm) 		18.7-22.6 mill
(475-575μm) 		23.6-25.2 mill
(600-690μm)
Roughness: 2nm 2nm 2nm 2nm 2nm
TTV: <20μm        
Polished: on one side on one side on one side on one side on one side

Ordering

71893-04 Silicon Wafer Type P, 1" each
71893-05 Silicon Wafer Type P, 2" each
71893-06 Silicon Wafer Type P, 3" each
71893-07 Silicon Wafer Type P, 4" each
71893-08 Silicon Wafer Type P, 6" each
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