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  • 產(chǎn)品名稱：Ossila材料Tris-PCz

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簡單介紹：
Tris-PCz, HTL material in TADF-OLED devices
詳情介紹：

Tris-PCz has a tri-carbazole back-boned structure joined at the 3 and 6 positions. The highly-conjugated carbazoles makes Tris-PCz electron-rich, which is widely used as a hole-transport layer material in TADF-OLED devices. 

Due to its electron-rich nature, Tris-PCz can form exciplexes with electron-deficient materials (such as B4PyPPM) in highly-efficient OLED devices with TADF characteristics.

Tris-PCz has a high triplet energy (ET = 2.7 eV), so it is also frequently used as an exciton block layer material to effectively prevent the excitons' energy from being transferred (to the donor or acceptor) to achieve high fluorescence quantum efficiency.

General Information

CAS number 1141757-83-6
Full name 9-Phenyl-3,6-bis(9-phenyl-9Hcarbazol-3-yl)-9H-carbazole
Chemical formula C54H35N3
Molecular weight 725.28 g/mol
Absorption λmax 305 nm in DCM
Fluorescence λmax  415 nm in DCM
HOMO/LUMO HOMO = 5.6 eV, LUMO = 2.1 eV; T1 = 2.7 eV [1]
Synonyms 9,9',9''-Triphenyl-9H,9'H,9''H-3,3':6',3''-tercarbazole
Classification / Family Carbazole derivative, Fluorescent host materials, Phosphorescent host materials, Hole-transport layer materials, Exciton-blocking layer materials, TADF-OLED materials, Organic electronics, Sublimed materials.

Product Details

Purity Sublimed > 99% (HPLC)
Melting point TGA: >270 °C (0.5% weight loss)
Appearance White crystals/powder

Chemical Structure

Tris-PCz structure
Chemical structure of Tris-PCz

Device Structure(s)

Device structure   ITO/HATCN (10 nm)/Tris-PCz (35 nm)/10 wt.% 4CzPN:mCBP (G-EML) (3 nm)/6 wt.% 4CzPN:2 wt.% 4CzTPN-Ph:mCBP (R-EML) (2 nm)/10 wt.% 3CzTRZ:PPT (B-EML) (10 nm)/PPT (50 nm)/LiF (0.8 nm)/Al (100 nm) [2]
Colour White white light emitting device
Max. Power Efficiency 30.3 lm?W?1
Max. Current Efficiency 38.6 cd/A
Max. EQE 17.6%
Device structure ITO/HATCN (10 nm)/Tris-PCz (35 nm)/10 wt.% 4CzPN:mCBP (G-EML) (5 nm)/6 wt.% 4CzPN:2 wt.% 4CzTPN-Ph:mCBP (R-EML) (4 nm)/10 wt.% 3CzTRZ:PPT (B-EML) (6 nm)/PPT (50 nm)/LiF (0.8 nm)/Al (100 nm) [2]
Colour White white light emitting device
Max. Power Efficiency 34.1 lm?W?1
Max. Current Efficiency 45.6 cd/A
Max. EQE 17.0%
Device structure ITO/MoO3 (1 nm)/TAPC (20 nm)/Tris-PCz (10 nm)/Tris-PCz:B4PyPPM:3 wt% Ir(MDQ)2acac (30 nm)/B4PyPPM (50 nm)/LiF (1 nm)/Al (100 nm) [3]
Colour Red red light emitting device
Max. Power Efficiency 37.3 lm?W?1
Max. Current Efficiency 33.7 cd/A
Max. EQE 20.3%
Device structure ITO (100 nm)/HATCN (10 nm)/Tris-PCz (30 nm)/mCBP (5 nm)/20 wt% of 3Ph2CzCzBN:mCBP (30 nm)/SF3-TRZ (10 nm)/ 30 wt% of Liq:SF3-TRZ (50 nm)/Liq (2 nm)/ Al (100 nm) [4]
Colour Blue blue light emitting device
Max. Power Efficiency 34.5 lm?W?1
Max. Current Efficiency 41.7 cd/A
Max. EQE  17.9%
Device structure ITO/TAPC (35 nm)/Tris-PCz (10 nm)/Tris-PCz:PIM-TRZ*(1:2) (30 nm)/PIM-TRZ (60 nm)/LiF (1 nm)/Al (100 nm) [5]
Colour Green green light emitting device
Max. Power Efficiency 71.0 lm?W?1
Max. Current Efficiency 52.0 cd/A
Max. EQE  18.6%
Device structure ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm) [6]
Colour Green green light emitting device
Max. Power Efficiency 46.5 lm?W?1
Max. Current Efficiency 37.0 cd/A
Max. EQE  11.9%
Max. Luminance 73, 800 cd/m2

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